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Home › Fabrication of localized SOI on localized thick box lateral epitaxial realignment of deposited non-crystalline film on bulk semiconductor substrates for photonics device integration

Fabrication of localized SOI on localized thick box lateral epitaxial realignment of deposited non-crystalline film on bulk semiconductor substrates for photonics device integration

US Patent 9236287 · Granted Jan 12, 2016

Estimated economic value: $510,000 ⓘ

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