Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gate rounding for reduced transistor leakage current

Gate rounding for reduced transistor leakage current

US Patent 9153659 · Granted Oct 6, 2015

Estimated economic value: $4,682,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Preparation method and application of non-noble metal single atom catalyst2025
Uncovering assembly of household appliance and household appliance2023
Disk offset-distance awareness data placement for storage system data protection2023
Cellulose nanocrystal-supported sodium alginate adsorbent2023
Method for determining optimal preservation temperature of anaerobic ammonium ox2022
Method for determining optimum preservation temperature of sulfur autotrophic de2022
Intelligent performance rating2022
Method for treating and recycling waste slurry in bobbin paper production2021
Method for preparing collagen aggregate and collagen from chromium-containing ta2021
Ecological method for denitrification and phosphorus removal in wastewater treat2019
Compound for enhancing the coupling degree of complex TRPV4-KCa2.3 and anti-hype2019
Weather data de-conflicting and correction system2018