Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrate

Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrate

US Patent 9153439 · Granted Oct 6, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for producing a group III nitride semiconductor by controlling the oxygen2022
Method for producing a group III nitride semiconductor by controlling the oxygen2022
Method for producing Group III nitride semiconductor, seed substrate and Group I2020
Method for producing Group III nitride semiconductor, seed substrate and Group I2020
Method for producing Group III nitride semiconductor including growing Group III2019
Method for producing Group III nitride semiconductor including growing Group III2019
Method for producing group III nitride semiconductor single crystal2018
Method for producing group III nitride semiconductor using a crucible2018
Method for producing a group III nitride semiconductor crystal and method for pr2017
Method for producing a group III nitride semiconductor crystal and method for pr2017
Method for producing a group III nitride semiconductor crystal and method for pr2017
Method for producing a group III nitride semiconductor crystal and method for pr2017