{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same", "item": "https://www.patentleaderboard.com/patent/9147745"}]}
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Home › Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same

Semiconductor devices formed using a sacrificial layer and methods for manufacturing the same

US Patent 9147745 · Granted Sep 29, 2015

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