Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of fabricating ultra short gate length thin film transistors using optical lithography

Method of fabricating ultra short gate length thin film transistors using optical lithography

US Patent 9147607 · Granted Sep 29, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fabrication method for multi-zoned and short channel thin film transistors2016
Metal oxide thin film transistor fabrication method2015
Fabrication method for ZnO thin film transistors using etch-stop layer2014
Low stress thermal and electrical interconnects for heterojunction bipolar trans2004
Thermally stable cascode2003
Integrated circuit and method2000
High power density microwave HBT with uniform signal distribution2000
Termal shunt stabilization of multiple part heterojunction bipolar transistors1998
Durable mask and method of fabrication1998
Method for fabricating microwave heterojunction bipolar transistors suitable for1997
Integrated circuit and method1997
Microwave heterojunction bipolar transistors suitable for low-power, low-noise, 1996