Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High speed gallium nitride transistor devices

High speed gallium nitride transistor devices

US Patent 9099433 · Granted Aug 4, 2015

Estimated economic value: $5,976,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device with a field plate having a recessed region and an overhang2025
Wafer with semiconductor devices and integrated electrostatic discharge protecti2025
Transistors with self-aligned source-connected field plates2025
Semiconductor device with conductive elements formed over dielectric layers and 2025
Transistor die with primary and ancillary transistor elements2025
Circuit die with isolation test structure2025
Semiconductor device with an insulating region formed between a control electrod2025
Transistors with source-connected field plates2024
Semiconductor device with conductive elements formed over dielectric layers and 2024
Transistor with center fed gate2023
Methods for forming semiconductor devices using sacrificial capping and insulati2023
Methods for forming semiconductor devices using sacrificial capping and insulati2023