Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process of forming an aluminum p-doped surface region of a semiconductor substrate

Process of forming an aluminum p-doped surface region of a semiconductor substrate

US Patent 9076919 · Granted Jul 7, 2015

Estimated economic value: $20,130,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the2021
Thick-film pastes containing lead- and tellurium-oxides, and their use in the ma2021
Conductive paste composition and semiconductor devices made therewith2020
Thick-film pastes containing lead-tellurium-boron-oxides, and their use in the m2020
Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the2019
Conductive paste composition and semiconductor devices made therewith2018
Thick-film pastes containing lead- and tellurium-oxides, and their use in the ma2018
Circuit board via configurations for high frequency signaling2018
Thick-film pastes containing lead-tellurium-lithium-oxides, and their use in the2017
Conductive paste composition and semiconductor devices made therefrom2017
Circuit board via configurations for high frequency signaling2017
Thick film resistive heater compositions comprising Ag and RuO2, and methods of 2016