Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for controlled growth of silicon carbide and structures produced by same

Method for controlled growth of silicon carbide and structures produced by same

US Patent 9048166 · Granted Jun 2, 2015

Estimated economic value: $7,718,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Large diameter silicon carbide wafers2025
Nondestructive characterization for crystalline wafers2025
Large dimension silicon carbide single crystalline materials with reduced crysta2024
Large diameter silicon carbide wafers2024
Nondestructive characterization for crystalline wafers2024
Reduced optical absorption for silicon carbide crystalline materials2024
Dislocation distribution for silicon carbide crystalline materials2022
Alignment for wafer images2022
Methods and apparatuses related to shaping wafers fabricated by ion implantation2020
Method of producing high quality silicon carbide crystal in a seeded growth syst2017
Producing high quality bulk silicon carbide single crystal by managing thermal s2015
Micropipe-free silicon carbide and related method of manufacture2015