Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Forming fence conductors using spacer etched trenches

Forming fence conductors using spacer etched trenches

US Patent 9034758 · Granted May 19, 2015

Estimated economic value: $9,381,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thin film resistor (TFR) formed in an integrated circuit device using wet etchin2024
Thin film resistor (TFR) formed in an integrated circuit device using TFR cap la2022
Thin film resistor (TFR) formed in an integrated circuit device using an oxide c2022
Forming a thin film resistor (TFR) in an integrated circuit device2021
Systems and methods for forming a thin film resistor integrated in an integrated2020
Spacer enabled poly gate2019
Resistive memory cell with sloped bottom electrode2018
Resistive memory cell having a reduced conductive path area2018
Method for forming resistive memory cell having a spacer region under an electro2018
Resistive memory cell having a single bottom electrode and two top electrodes2018
Forming fence conductors using spacer etched trenches2017
Resistive memory cell with bottom electrode having a sloped side wall2016