Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Bipolar transistor with embedded epitaxial external base region and method of forming the same

Bipolar transistor with embedded epitaxial external base region and method of forming the same

US Patent 9012291 · Granted Apr 21, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for preparing heat-conductive cement slurry for well cementation2025
Method for point-of-interest information management, electronic device, and stor2025
L-2-hydroxyglutarate biosensor based on specific transcriptional regulator and a2025
Method for monitoring failure of coated particles in fuel elements in core of pe2025
Techniques for pathloss reference signal measurement in unlicensed bands2025
Radio resource management in power saving mode2025
Reception (RX) beam sweep scale factor2025
Determine a transport block size (TBS) included in transmissions over a sidelink2025
Simultaneous uplink transmission on multiple panels in wireless communication2025
Handover in dual connectivity to a primary base station and a secondary base sta2025
Propagating job contexts to a job execution environment2025
Method for enhanced HARQ-ACK feedback in wireless communications2025