{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Epitaxially growing GaN layers on silicon (100) wafers", "item": "https://www.patentleaderboard.com/patent/9006083"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Epitaxially growing GaN layers on silicon (100) wafers

Epitaxially growing GaN layers on silicon (100) wafers

US Patent 9006083 · Granted Apr 14, 2015

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanc2023
Seal compositions, methods, and structures for planar solid oxide fuel cells2020
Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanc2020
Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanc2019
Seal compositions, methods, and structures for planar solid oxide fuel cells2018
Silicon composite substrates2018
Structure and method for high performance large-grain-poly silicon backplane for2018
Silicon-based backplane structures and methods for display applications2017
Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanc2017
Method of electrochemically fabricating multilayer structures having improved in2017
Methods of forming three-dimensional structures having reduced stress and/or cur2017
Seal compositions, methods, and structures for planar solid oxide fuel cells2016