Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and apparatus for fabricating piezoresistive polysilicon by low-temperature metal induced crystallization

Method and apparatus for fabricating piezoresistive polysilicon by low-temperature metal induced crystallization

US Patent 9006016 · Granted Apr 14, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and method of fabricating the same2020
Integration scheme for gate height control and void free RMG fill2019
Heterogeneous integration of 3D SI and III-V vertical nanowire structures for mi2019
Integration of gate structures and spacers with air gaps2019
Integration scheme for gate height control and void free RMG fill2018
Programmable via devices with metal/semiconductor via links and fabrication meth2018
Structure and method for capping cobalt contacts2018
Self-powered tactile pressure sensors2018
Self-powered tactile pressure sensors2018
Methods of forming MIS contact structures on transistor devices2017
Method, apparatus, and system for E-fuse in advanced CMOS technologies2017
Programmable via devices with metal/semiconductor via links and fabrication meth2017