Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric

Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric

US Patent 8981460 · Granted Mar 17, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pi-type trench gate silicon carbide MOSFET device and fabrication method thereof2025
Display panel and display with conductive enclosure structure to connect touch e2025
Display panel and display device2025
Power semiconductor device and preparation method thereof2025
Electron extraction type free-wheeling diode device and preparation method there2025
Weak-signal reading circuit for sensor2025
Trench gate silicon carbide MOSFET device and fabrication method thereof2025
Power semiconductor device and manufacturing method thereof2024
Semiconductor device and method of manufacturing semiconductor device2021
Insulated gate bipolar transistor device and method for manufacturing the same2021
Solid power semiconductor field effect transistor structure2021
Solid power semiconductor field effect transistor structure2021