Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Asymmetric source-drain field-effect transistor having a mixed schottky/P-N junction and method of making

Asymmetric source-drain field-effect transistor having a mixed schottky/P-N junction and method of making

US Patent 8969160 · Granted Mar 3, 2015

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method and apparatus for controlling transmission of VBO signal and display term2019
Integrated circuit sensor device for charge detection hybridizing a lateral meta2019
Controlling device and method for frequency synchronization and LCD television2018
Controlling device and method for frequency synchronization and LCD television2018
Transistor and method of making2017
Semiconductor device and method of making2016
Ultra-shallow junction semiconductor field-effect transistor and method of makin2016
Asymmetrical gate MOS device and method of making2015
Asymmetrical gate MOS device and method of making2015
Semiconductor device and method of making2015
Metal silicide thin film, ultra-shallow junctions, semiconductor device and meth2015
Body contact SOI transistor structure and method of making2015