Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Breaking up long-channel field effect transistor into smaller segments for reliability modeling

Breaking up long-channel field effect transistor into smaller segments for reliability modeling

US Patent 8875070 · Granted Oct 28, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Using entire area of chip in TDDB checking2014
Mitigation of detrimental breakdown of a high dielectric constant metal-insulato2014
Semiconductor device and process for reducing damaging breakdown in gate dielect2012
Semiconductor device and process for reducing damaging breakdown in gate dielect2012
Hot-electronic injection testing of transistors on a wafer2011
Electrostatic discharge device verification in an integrated circuit2009
Embedded test circuitry and a method for testing a semiconductor device for brea2008
Detecting defects in integrated circuits2000
Detecting breakdown in dielectric layers1998
Method for forming integrated circuits having buried doped regions1995
Method for forming integrated circuits having buried doped regions1994
Local interconnect1988