Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device

Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor device

US Patent 8872226 · Granted Oct 28, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrical component box2024
Electronic component and method for manufacturing electronic component2024
Magnetic refrigeration system2024
Free-standing substrate comprising polycrystalline group 13 element nitride and 2020
Epitaxial substrate for semiconductor elements, semiconductor element, and manuf2020
Free-standing substrate comprising polycrystalline group 13 element nitride and 2020
Polycrystalline gallium nitride self-supported substrate and light emitting elem2020
Epitaxial substrate for semiconductor elements, semiconductor element, and manuf2020
Heat discharge structures for light source devices and light source systems2020
Epitaxial substrate for semiconductor elements, semiconductor element, and manuf2020
Surface-emitting device, vertical external-cavity surface-emitting laser, and me2020
Epitaxial substrate for semiconductor elements, semiconductor element, and manuf2019