Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device

Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device

US Patent 8866223 · Granted Oct 21, 2014

Estimated economic value: $4,304,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

4H-SiC electronic device with improved short-circuit performances, and manufactu2025
4H-SiC electronic device with improved short-circuit performances, and manufactu2025
Method for manufacturing a SiC electronic device with reduced handling steps, an2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of a semiconductor device with efficient edge structure2025
Manufacturing method of an element of an electronic device having improved relia2025
Silicon carbide vertical conduction MOSFET device for power applications and man2025
Silicon carbide vertical conduction MOSFET device for power applications and man2025
Ohmic contact formation in a SiC-based electronic device2025
Vertical-conduction silicon carbide MOSFET device having improved gate biasing s2025
Vertical-conduction silicon carbide MOSFET device having improved gate biasing s2025
Scalable MPS device based on SiC2025