Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations

US Patent 8866126 · Granted Oct 21, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method of forming micro-LEDs with ultra-low leakage current2025
Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nit2025
Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nit2025
Laser beam extraction using distributed bragg reflector (DBR) mirror systems wit2025
Laser beam extraction using distributed bragg reflector (DBR) mirror systems wit2025
Nonlinear power source capability determination2025
Synchronized light source for laser fusion system and method for energy generati2025
Synchronized light source for laser fusion system and method for energy generati2025
Airplane configured with a high intensity pulse laser generation system and meth2025
Airplane configured with a high intensity pulse laser generation system and meth2025
System and method for providing color light sources in proximity to predetermine2025
Flexible tube insertion apparatus, control apparatus, and method of changing rig2025