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Home › N-type contact electrode formed on an N-type semiconductor layer and method of forming same using a second metal electrode layer heat-treated after being formed on a first, heat-treated metal electrode layer

N-type contact electrode formed on an N-type semiconductor layer and method of forming same using a second metal electrode layer heat-treated after being formed on a first, heat-treated metal electrode layer

US Patent 8865591 · Granted Oct 21, 2014

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