Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process to remove Ni and Pt residues for NiPtSi application using chlorine gas

Process to remove Ni and Pt residues for NiPtSi application using chlorine gas

US Patent 8859431 · Granted Oct 14, 2014

Estimated economic value: $181,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Can wiper2025
System and method for improving color appearance of solar roofs2024
System and method for improving color appearance of solar roofs2022
Solution based etching of titanium carbide and titanium nitride structures2017
Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residues2016
Aqua regia and hydrogen peroxide HCL combination to remove Ni and NiPt residues2016
Gate structures for transistor devices for CMOS applications and products2016
Gate structures for transistor devices for CMOS applications and products2016
Method to etch Cu/Ta/TaN selectively using dilute aqueous HF/H2SO4 solution2016
Method to grow in-situ crystalline IGZO using co-sputtering targets2016
Etching of semiconductor structures that include titanium-based layers2016
Combinatorial screening of metallic diffusion barriers2016