Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Gallium nitride devices with conductive regions

Gallium nitride devices with conductive regions

US Patent 8859400 · Granted Oct 14, 2014

Estimated economic value: $7,039,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Extrinsic field termination structures for improving reliability of high-voltage2025
Extrinsic field termination structures for improving reliability of high-voltage2024
Barrier for preventing eutectic break-through in through-substrate vias2023
Device isolation design rules for HAST improvement2021
FET operational temperature determination by field plate resistance thermometry2020
FET operational temperature determination by gate structure resistance thermomet2020
Multi header for thermoelectric device2020
Systems and methods for mitigating heat rejection limitations of a thermoelectri2019
Barrier for preventing eutectic break-through in through-substrate vias2018
Method and apparatus for measuring perimeter of swimming pools2018
Thermoelectric refrigeration system control scheme for high efficiency performan2018
Methods of manufacturing gallium nitride devices2018