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Home › Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on a surface passivation layer formed at a region between emitter contact and base contact

Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on a surface passivation layer formed at a region between emitter contact and base contact

US Patent 8853827 · Granted Oct 7, 2014

Estimated economic value: $10,658,000 ⓘ

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