Insulated gate bipolar transistor having control electrode disposed in trench

Assignee

• Kabushiki Kaisha Toshiba

Inventors

• Tsuneo Ogura (83 patents)
• Kazutoshi Nakamura (84 patents)
• Hideaki Ninomiya (39 patents)
• Tomoko Matsudai (128 patents)
• Yuichi Oshino (8 patents)

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