Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Direct contact in trench with three-mask shield gate process

Direct contact in trench with three-mask shield gate process

US Patent 8847306 · Granted Sep 30, 2014

Estimated economic value: $719,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Shielded trench devices2025
Nonvolatile memory device, read method for nonvolatile memory device, and memory2025
Field stop IGBT with grown injection region2025
High voltage edge termination structure for power semiconductor devices2025
High voltage edge termination structure for power semiconductor devices and manu2024
High voltage edge termination structure for power semiconductor devices and manu2024
Back side dopant activation in field stop IGBT2023
Method for forming shielding polysilicon sidewall for protecting shielded gate t2023
Reusable wide bandgap semiconductor substrate2023
Shielded gate trench MOSFET devices2023
Shielded gate trench MOSFET devices2023
Shielded gate trench MOSFET devices2023