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Home › Solid-state imaging device with channel stop region with multiple impurity regions in depth direction to reduce leakage of electrical charges and method for manufacturing the same

Solid-state imaging device with channel stop region with multiple impurity regions in depth direction to reduce leakage of electrical charges and method for manufacturing the same

US Patent 8816416 · Granted Aug 26, 2014

Estimated economic value: $146,000 ⓘ

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