Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including a stress relief layer and method of manufacturing

Semiconductor device including a stress relief layer and method of manufacturing

US Patent 8803297 · Granted Aug 12, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device having contact trenches extending from opposite sides of a 2024
Transistor component having gate electrodes and field electrodes2023
Transistor component having gate electrodes and field electrodes2023
Semiconductor device with polymer-based insulating material and method of produc2023
Semiconductor device with polymer-based insulating material and method of produc2023
Gate contact structure for semiconductor device2023
Semiconductor device with a dopant source2023
Terminal structure of a power semiconductor device2022
Transistor having at least one transistor cell with a field electrode2022
Semiconductor device with multi-branch gate contact structure2021
Semiconductor device including an integrated resistor and method of producing th2021
Alternator assembly having a gated diode arranged in a load path between an inpu2020