Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation

Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantation

US Patent 8803112 · Granted Aug 12, 2014

Estimated economic value: $42,844,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for gas phase selective etching of silicon-germanium layers2025
Solvents for acetylene fluid storage2024
Mobile support assembly for holding and transporting a container2023
Method for pretreating and recovering a rare gas from a gas contaminant stream e2023
Dopant fluid storage and dispensing systems utilizing high performance, structur2023
Mobile support assembly for holding and transporting a container2022
Storage and delivery of antimony-containing materials to an ion implanter2021
Support assembly for a gas cylinder2020
Storage and delivery of antimony-containing materials to an ion implanter2020
Tin-containing dopant compositions, systems and methods for use in ion implantat2020
Antimony-containing materials for ion implantation2020
Gas delivery valve and methods of use thereof2020