Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same

Semiconductor device having selectively nitrided gate insulating layer and method of fabricating the same

US Patent 8772115 · Granted Jul 8, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Device and method with gaze estimating2025
Semiconductor device2024
Semiconductor device2024
Semiconductor device and method of manufacturing the same2024
Semiconductor device including a gate structure2024
Semiconductor device and method of fabricating the same2024
Three-dimensional semiconductor devices2024
Semiconductor device2024
Semiconductor device and method of manufacturing the same2023
Method of manufacturing an integrated circuit device2023
Semiconductor device2023
Semiconductor device and method of fabricating the same2023