Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Apparatus and method for high voltage MOS transistor

Apparatus and method for high voltage MOS transistor

US Patent 8766357 · Granted Jul 1, 2014

Estimated economic value: $3,065,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor devices with backside power rail and backside self-aligned via2025
Spacers for semiconductor devices including backside power rails2025
Integrated circuit structure with backside interconnection structure having air 2025
Passivation scheme for pad openings and trenches2025
Semiconductor structure and method for forming the same2025
Semiconductor device having backside via and method of fabricating thereof2025
Semiconductor device structure and methods of forming the same2025
Air spacer and capping structures in semiconductor devices2025
Method for forming long channel back-side power rail device2025
Semiconductor devices with backside power rail and method thereof2025
Semiconductor device with backside power rail and methods of fabrication thereof2025
Source/drain contacts and methods of forming same2025