Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing ESD resistant nitride semiconductor light emitting device with enhanced light extraction efficiency

Method of manufacturing ESD resistant nitride semiconductor light emitting device with enhanced light extraction efficiency

US Patent 8728841 · Granted May 20, 2014

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and light emitting device package comprising same2021
Multiple quantum well light emitting device with multi-layer barrier structure2017
Light emitting device, and method for fabricating the same2016
Light emitting device2015
Nitride semiconductor light emitting device2015
Nitride semiconductor light emitting device2015
Nitride semiconductor light emitting device and fabrication method thereof2014
Nitride semiconductor light emitting device and fabrication method thereof2014
Method of manufacturing a vertically-structured GaN-based light emitting diode2014
Vertical group III-nitride light emitting device and method for manufacturing th2014
Side-view type light emitting device and line light source type light emitting d2013
Semiconductor light-emitting device with improved light extraction efficiency2013