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Home › Method of forming SOI-like structure in a bulk semiconductor substrate by annealing a lower portion of a trench while protecting an upper portion of the trench

Method of forming SOI-like structure in a bulk semiconductor substrate by annealing a lower portion of a trench while protecting an upper portion of the trench

US Patent 8673736 · Granted Mar 18, 2014

Estimated economic value: $3,109,000 ⓘ

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