Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states

Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states

US Patent 8637366 · Granted Jan 28, 2014

Estimated economic value: $5,817,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertical fin-based field effect transistor (FinFET) with neutralized fin tips2025
Systems and methods for data migration2025
Method and system for fin-based voltage clamp2024
Three dimensional perpendicular magnetic tunnel junction with thin film transist2024
Systems and methods for processing and transmitting sensor data2024
AI enabled sensor data acquisition2023
Compact and efficient CMOS inverter2023
DRAM with selective epitaxial cell transistor2023
High density spin orbit torque magnetic random access memory2023
Selector transistor with continuously variable current drive2023
Selector transistor with metal replacement gate wordline2022
Three dimensional perpendicular magnetic tunnel junction with thin film transist2022