Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Programming method for NAND flash memory device to reduce electrons in channels

Programming method for NAND flash memory device to reduce electrons in channels

US Patent 8599614 · Granted Dec 3, 2013

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Flash memory with high integration2025
Memory device using semiconductor element2025
NAND flash memory and manufacturing method thereof2025
Semiconductor memory device and manufacturing method of semiconductor memory dev2024
Memory device2024
Key management system providing secure management of cryptographic keys, and met2024
Semiconductor-element-including memory device2024
Semiconductor memory device and reading method2024
Semiconductor memory and method of manufacturing the same2024
Random number generator and method of generating output random number2024
NAND flash memory with reduced planar size2023
Method and secure boot control circuit for controlling secure boot of electronic2023