Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Variable capacitor single-electron transistor including a P-N junction gate electrode

Variable capacitor single-electron transistor including a P-N junction gate electrode

US Patent 8581233 · Granted Nov 12, 2013

Estimated economic value: $7,244,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method to manufacture silicon quantum islands and single-electron devices2011
Variable capacitor single-electron transistor including a P-N junction gate elec2009
Forming a semiconductor structure in manufacturing a semiconductor device using 2009
Method to improve drive current by increasing the effective area of an electrode2008
N+ poly on high-k dielectric for semiconductor devices2008
Methods and apparatus for inducing stress in a semiconductor device2008
Pitch multiplication process2007
Variable capacitor single-electron device2007
Method to manufacture silicon quantum islands and single-electron devices2006
Method to improve drive current by increasing the effective area of an electrode2006
Suspended gate single-electron device2006
Suspended gate single-electron device2005