Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stress engineering to reduce dark current of CMOS image sensors

Stress engineering to reduce dark current of CMOS image sensors

US Patent 8546860 · Granted Oct 1, 2013

Estimated economic value: $4,051,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor structure with resistor and capacitor2025
Metal gate structures and methods of fabricating the same in field-effect transi2025
Semiconductor image-sensing structure and method for forming the same2025
Circuit structure with gate configuration2025
Transistor including a hydrogen-diffusion barrier and methods for forming the sa2025
Integrated circuit having angled conductive feature2025
Thin film transistor featuring variable thickness glue layer with tapered end2025
Method for forming a 3-D semiconductor memory structure comprising horizontal an2025
Thin film transistor including a compositionally-modulated active region and met2025
Bipolar selector with independently tunable threshold voltages2025
Semiconductor device with gate2025
Memory device and method for fabricating the same2025