Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Conductive filament based memory elements and methods with improved data retention and/or endurance

Conductive filament based memory elements and methods with improved data retention and/or endurance

US Patent 8531867 · Granted Sep 10, 2013

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Programmable impedance elements and devices that include such elements2016
Fabrication methods of conducting bridge random access memory (CBRAM) device str2016
Memory elements and methods with improved data retention and/or endurance2015
Programmable impedance memory elements, methods of manufacture, and memory devic2014
Variable impedance memory device structure and method of manufacture including p2014
Variable impedance memory element structures, methods of manufacture, and memory2014
Conducting bridge random access memory (CBRAM) device structures2013
Method, system and computer program for configuring firewalls2012
Processing systems and methods for molecular memory2010
Systems, tools and methods for production of molecular memory2010
Processing systems and methods for molecular memory2008
Molecular memory devices and methods2007