Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Junction field effect transistor with region of reduced doping

Junction field effect transistor with region of reduced doping

US Patent 8513713 · Granted Aug 20, 2013

Estimated economic value: $5,830,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Designs and fabrication of nanogap sensors2025
Designs and fabrication of nanogap sensors2025
Wearable device with energy harvesting2025
Semiconductor devices with single-photon avalanche diodes, light scattering stru2025
Electrochemical sensor, and a method of forming an electrochemical sensor2025
Electrochemical sensor, and a method of forming an electrochemical sensor2025
Thermal platform and a method of fabricating a thermal platform2024
Thermal platform and a method of fabricating a thermal platform2024
Systems and methods for charge storage and providing power2024
Apparatuses and methods for testing semiconductor circuitry using microelectrome2024
Insulation jacket for top coil of an isolated transformer2024
Spark gap structures for detection and protection against electrical overstress 2024