Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making an inverted-T channel transistor

Method of making an inverted-T channel transistor

US Patent 8513066 · Granted Aug 20, 2013

Estimated economic value: $3,072,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Structures and methods of fabricating electronic devices using separation and ch2024
Structures and methods of fabricating electronic devices using separation and ch2023
Shallow trench isolation for SOI structures combining sidewall spacer and bottom2014
Multiple device types including an inverted-T channel transistor and method ther2014
Phase change memory cell with heater and method therefor2013
Method of making a phase change memory cell having a silicide heater in conjunct2013
Two-transistor floating-body dynamic memory cell2013
Method to improve source/drain parasitics in vertical devices2012
Shallow trench isolation for SOI structures combining sidewall spacer and bottom2012
Integrated circuit using FinFETs and having a static random access memory (SRAM)2012
Method of forming an electronic device using a separation technique2011
Phase change memory cell with heater and method therefor2011