Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device with one-time programmable memory cell including anti-fuse with metal/polycide gate

Semiconductor device with one-time programmable memory cell including anti-fuse with metal/polycide gate

US Patent 8508971 · Granted Aug 13, 2013

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Solid state sensor for metal ion detection and trapping in solution2021
Solid state sensor for metal ion detection and trapping in solution2018
Solar cell with absorber layer with three dimensional projections for energy har2016
Solar cell with absorber layer with three dimensional projections for energy har2016
Silicided MOS capacitor explosive device initiator2016
Semiconductor device with one-time programmable memory cell including anti-fuse 2015
Semiconductor device with one-time programmable memory cell including anti-fuse 2015
Semiconductor device with one-time programmable memory cell including anti-fuse 2015
Solid state sensor for metal ion detection and trapping in solution2015
Silicided MOS capacitor explosive device initiator2014
Semiconductor device with one-time programmable memory cell including anti-fuse 2014
Semiconductor device with one-time programmable memory cell including anti-fuse 2014