Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and structure for shielded gate trench FET

Method and structure for shielded gate trench FET

US Patent 8497549 · Granted Jul 30, 2013

Estimated economic value: $5,672,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods related to power semiconductor devices with thick bottom oxide layers2015
Methods of making power semiconductor devices with thick bottom oxide layer2012
Structure and method for forming a minimum pitch trench-gate FET with heavy body2009
Hydrogen anneal for creating an enhanced trench for trench MOSFETS2004
Method of manufacturing a trench MOSFET using selective growth epitaxy2003
Trench MOSFET formed using selective epitaxial growth2003
Method of manufacturing a trench MOSFET using selective growth epitaxy2002
Method of increasing trench density for semiconductor2001