Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Phase change memory and method for fabricating the same

Phase change memory and method for fabricating the same

US Patent 8481348 · Granted Jul 9, 2013

Estimated economic value: $1,573,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fin field-effect transistor2019
Semiconductor channel-stop layer and method of manufacturing the same2018
Fin field-effect transistor and fabrication method thereof2018
Metal gate stack structure and manufacturing method2016
Method for manufacturing semiconductor device with tensile stress2016
Segregated FinFET structure and manufacturing method2016
Resistive random access memory device and manufacturing methods2016
Semiconductor device and manufacturing method thereof2016
Fin-type field effect transistor and manufacturing method thereof2016
Semiconductor device and manufacturing method thereof2015
TFT floating gate memory cell structures2015
Phase change memory2015