Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memory cell using BTI effects in high-k metal gate MOS

Memory cell using BTI effects in high-k metal gate MOS

US Patent 8432751 · Granted Apr 30, 2013

Estimated economic value: $19,607,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Single gated 3D nanowire inverter for high density thick gate SoC applications2025
High-voltage transistor with self-aligned isolation2025
High-voltage transistor with self-aligned isolation2025
Co-integrated high performance nanoribbon transistors with high voltage thick ga2025
Gate-all-around integrated circuit structures having dual nanoribbon channel str2025
Adjacent gate-all-around integrated circuit structures having non-merged epitaxi2025
Adjacent gate-all-around integrated circuit structures having non-merged epitaxi2025
Nanoribbon thick gate devices with differential ribbon spacing and width for SOC2025
Self-aligned gate endcap (SAGE) architecture having gate contacts2025
Non-planar I/O and logic semiconductor devices having different workfunction on 2025
Non-planar I/O and logic semiconductor devices having different workfunction on 2025
Integration of Si-based transistors with non-Si technologies by semiconductor re2024