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Home › Patterning a gate stack of a non-volatile memory (NVM) with formation of a metal-oxide-semiconductor field effect transistor (MOSFET)

Patterning a gate stack of a non-volatile memory (NVM) with formation of a metal-oxide-semiconductor field effect transistor (MOSFET)

US Patent 8426263 · Granted Apr 23, 2013

Estimated economic value: $9,249,000 ⓘ

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