Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High-voltage BJT formed using CMOS HV processes

High-voltage BJT formed using CMOS HV processes

US Patent 8415764 · Granted Apr 9, 2013

Estimated economic value: $4,980,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Physically unclonable function produced using OTP memory2025
Systems and methods for retinal imaging2025
Devices and methods for in vivo tissue diagnosis2025
Programmable resistance memory on wide-bandgap semiconductor technologies2024
One-time programmable memories with ultra-low power read operation and novel sen2023
One-time programmable memories with low power read operation and novel sensing s2021
One-time programmable memory using gate-all-around structures2021
Fully testible OTP memory2021
Programmable resistance memory on thin film transistor technology2021
Programmable resistive memory formed by bit slices from a standard cell library2020
Programmable resistive memories with low power read operation and novel sensing 2020
Programmable resistive device and memory using diode as selector2020