Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride

Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride

US Patent 8384217 · Granted Feb 26, 2013

Estimated economic value: $1,610,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuits with an insultating layer and methods for producing such int2016
Technique for forming a dielectric interlayer above a structure including closel2014
Increased density of low-K dielectric materials in semiconductor devices by appl2014
Increased stability of a complex material stack in a semiconductor device by pro2013
Methods of fabricating a semiconductor IC having a hardened shallow trench isola2013
Metal cap layer with enhanced etch resistivity for copper-based metal regions in2013
Metal cap layer with enhanced etch resistivity for copper-based metal regions in2013
Increasing reliability of copper-based metallization structures in a microstruct2012
Increasing reliability of copper-based metallization structures in a microstruct2012
Method of forming a dielectric cap layer for a copper metallization by using a h2012
Semiconductor device comprising a copper alloy as a barrier layer in a copper me2012
Semiconductor device comprising a copper alloy as a barrier layer in a copper me2012