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Home › Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on top of a dielectric layer formed at a region between emitter contact and base contact

Silicon carbide bipolar junction transistor (BJT) having a surface electrode disposed on top of a dielectric layer formed at a region between emitter contact and base contact

US Patent 8378390 · Granted Feb 19, 2013

Estimated economic value: $5,885,000 ⓘ

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