Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for realizing a nanometric circuit architecture between standard electronic components and semiconductor device obtained with said method

Method for realizing a nanometric circuit architecture between standard electronic components and semiconductor device obtained with said method

US Patent 8358010 · Granted Jan 22, 2013

Estimated economic value: $9,358,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thermoelectric generator2019
Silicon integrated, out-of-plane heat flux thermoelectric generator2018
Silicon integrated bivalve thermoelectric generator of out-of-plane heat flux co2018
3D integrated thermoelectric generator operating in an out-of-plane heat flux co2018
Seebeck/Peltier thermoelectric conversion element with parallel nanowires of con2016
Seebeck/peltier thermoelectric conversion device having phonon confinement layer2016
Seebeck/peltier thermoelectric conversion device employing treated films of semi2015
Method of fabricating nanosized filamentary carbon devices over a relatively lar2012
Method of fabricating nanosized filamentary carbon devices over a relatively lar2011
Nanometric device with a hosting structure of nanometric elements2011
Nanometric device with a hosting structure of nanometric elements2011
Method for realizing an electric linkage in a semiconductor electronic device be2011