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Home › Enhanced confinement of high-K metal gate electrode structures by reducing material erosion of a dielectric cap layer upon forming a strain-inducing semiconductor alloy

Enhanced confinement of high-K metal gate electrode structures by reducing material erosion of a dielectric cap layer upon forming a strain-inducing semiconductor alloy

US Patent 8349694 · Granted Jan 8, 2013

Estimated economic value: $1,920,000 ⓘ

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