Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Double-pulse write for phase change memory

Double-pulse write for phase change memory

US Patent 8289762 · Granted Oct 16, 2012

Estimated economic value: $11,593,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pillar select transistor for 3-dimensional cross point memory2025
Multi-level memory programming and readout2024
Bipolar decoder for crosspoint memory2024
Apparatuses and methods for concurrently accessing multiple partitions of a non-2023
Self-aligned cross-point phase change memory-switch array2023
Apparatuses and methods for concurrently accessing multiple partitions of a non-2022
Device, system and method to float a decoder for deselected address lines in a t2022
Bipolar decoder for crosspoint memory cells2021
Scalable bandwidth non-volatile memory2021
Semiconductor photonic devices using phase change materials2020
Apparatuses and methods including memory access in cross point memory2020
Apparatuses and methods for concurrently accessing multiple partitions of a non-2020