Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method and apparatus for growing high purity 2H-silicon carbide

Method and apparatus for growing high purity 2H-silicon carbide

US Patent 8278666 · Granted Oct 2, 2012

Estimated economic value: $17,657,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated power module2025
Solid-state cooler device with grid point contacts2025
Superconducting phase-change material switch2025
Reconfigurable solar array for stable output voltage over a range of temperature2024
Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS2024
Superconductor junction for a solid state cooler2024
Cooler device with aluminum oxide insulators2023
Cooler device with aluminum oxide insulators2023
Integrated power module2023
Method to integrate DC and RF phase change switches into high-speed SiGe BiCMOS2022
Housing for a power module assembly2022
Solid state cooler device2022